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Python Implementation of Band to Band Tunneling in MOSFET
Author Name : Hardik Sharma
DOI: https://doi.org/10.56025/IJARESM.2023.116232108
ABSTRACT
This thesis explores the phenomenon of band-to-band tunneling in Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices. Band-to-band tunneling is a quantum mechanical effect that allows electrons to tunnel through the energy barrier between the valence band and the conduction band in a semiconductor material. Understanding and accurately modeling this effect is crucial for the design and optimization of advanced semiconductor devices. This work presents a comprehensive analysis of band-to-band tunneling using the time-independent Schrödinger equation within the device structure. The code implementation in Python is used to simulate the behavior of electrons in the presence of a potential energy barrier, and the resulting tunneling current is calculated and analyzed.